发明名称 METHODS, APPARATUSES, AND SYSTEMS FOR FABRICATING THREE DIMENSIONAL INTEGRATED CIRCUITS
摘要 The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One embodiment of the method comprises providing a wafer or other substrate having a plurality of through holes. In addition, the method includes supporting the wafer or other substrate with a wafer or other substrate holder mounted in a process chamber. The method further includes generating a pressure differential between the front side of the wafer or other substrate and the back side of the wafer or other substrate while the wafer or other substrate is supported on the wafer or other substrate holder so that the pressure differential causes fluid flow through the through holes. Also, the method includes establishing process conditions in the process chamber for at least one process to fabricate integrated circuits. Embodiments of a system and embodiments of an apparatus according to the present invention are also presented.
申请公布号 KR101116585(B1) 申请公布日期 2012.04.17
申请号 KR20097013216 申请日期 2007.12.20
申请人 发明人
分类号 H01L21/02;H01L21/683 主分类号 H01L21/02
代理机构 代理人
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