发明名称 |
Redundant memory array for replacing memory sections of main memory |
摘要 |
Memories and methods for replacing memory sections of a main memory array by mapping memory addresses for an entire main memory section to at least one memory section of a redundant memory array. One such memory includes a fuse block having programmable elements configured to be programmed to identify main memory sections to be mapped to redundant memory sections of the redundant memory array. The memory further includes a redundant memory logic circuit coupled to the redundant memory array and the fuse block. The redundant memory logic is configured to map the memory for a main memory section identified in the fuse block to at least one of the redundant memory sections of the redundant memory array.
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申请公布号 |
US8159890(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US201113013633 |
申请日期 |
2011.01.25 |
申请人 |
FUJIWARA YOSHINORI;MICRON TECHNOLOGY, INC. |
发明人 |
FUJIWARA YOSHINORI |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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