发明名称 |
Superjunction device having a dielectric termination and methods for manufacturing the device |
摘要 |
A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided.
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申请公布号 |
US8159039(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20090352276 |
申请日期 |
2009.01.12 |
申请人 |
CHENG XU;ICEMOS TECHNOLOGY LTD. |
发明人 |
CHENG XU |
分类号 |
H01L29/06;H01L21/30;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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