发明名称 |
Light-emitting diode and method for fabrication thereof |
摘要 |
A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree. |
申请公布号 |
US8158987(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US201113028370 |
申请日期 |
2011.02.16 |
申请人 |
NABEKURA WATARU;TAKEUCHI RYOUICHI;SHOWA DENKO K.K. |
发明人 |
NABEKURA WATARU;TAKEUCHI RYOUICHI |
分类号 |
H01L27/15;H01L21/00;H01L29/26;H01L33/20;H01L33/38 |
主分类号 |
H01L27/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|