发明名称 Yttria sintered body and component used for plasma processing apparatus
摘要 To provide a high purity Yttria sintered bodies having a high strength, a low dielectric loss and high plasma corrosion resistance of halogen gas during wide range surface roughness (Ra). An Yttria sintered body having a dielectric loss tan δ of 1×10−4 or less in the frequency range from 1 to 20 GHz, wherein the Yttria sintered body contains Yttria of 99.9% by mass or more, has a porosity of 1% or less and an average crystal grain size of 3 μm or less, and the cumulative frequency ratio calculated from the following formula (1) is 3 or less: Cumulative frequency ratio=D90/D50. In the above-described formula (1), the meanings of the individual symbols are as follows: D90: The crystal grain size (μm) at which the cumulative number of grains as calculated from the smaller grain size side is 90% in the grain size distribution of the crystal grains in terms of the number of grains. D50: The crystal grain size (μm) at which the cumulative number of grains as calculated from the smaller grain size side is 50% in the grain size distribution of the crystal grains in terms of the number of grains.
申请公布号 US8158544(B2) 申请公布日期 2012.04.17
申请号 US20100913073 申请日期 2010.10.27
申请人 OKAMOTO KEN;ARAHORI TADAHISA;FERROTEC CERAMICS CORPORATION 发明人 OKAMOTO KEN;ARAHORI TADAHISA
分类号 C04B35/50;B29D11/00;C04B35/00;C04B35/51 主分类号 C04B35/50
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