Double-stacked EBG structure

摘要

In a double-stacked electromagnetic bandgap (EBG) structure, a first conductive plane and a second conductive plane are spaced apart in parallel. At least two EBG layers are embedded in parallel between the first conductive plane and the second conductive plane. The at least two EBG layers have different stopband characteristics. A plurality of vias connect the at least two EBG layers respectively to one of the first and second conductive planes. At least the vias connecting one of the EBG layers pass through via holes in cells of another EBG layer.