发明名称 |
Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith |
摘要 |
It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon. |
申请公布号 |
US8158568(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20100801452 |
申请日期 |
2010.06.09 |
申请人 |
YOKOI SHIGERU;WAKIYA KAZUMASA;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
YOKOI SHIGERU;WAKIYA KAZUMASA |
分类号 |
C11D3/34;H01L21/768;C11D1/62;C11D3/44;C11D7/32;C11D11/00;G03F7/32;H01L21/304;H01L21/308;H01L21/311 |
主分类号 |
C11D3/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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