发明名称 |
Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device |
摘要 |
A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure. |
申请公布号 |
US8158484(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20100679385 |
申请日期 |
2010.03.22 |
申请人 |
ORLOWSKI MARIUS;WILD ANDREAS;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS;WILD ANDREAS |
分类号 |
H01L21/331;H01L21/8222 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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