发明名称 Microelectronic sensor device
摘要 An optical device provides evanescent radiation, in response to incident radiation, in a detection volume for containing a target component in a medium. The detection volume has at least one in-plane dimension (W1) smaller than a diffraction limit. The diffraction limit is defined by the radiation wavelength and the medium. The evanescent radiation is provided by aperture defining structures having a smallest in plane aperture dimension (W1) smaller than the diffraction limit. The detection volume is provided between the aperture defining structures. The aperture defining structures further define a largest in plane aperture dimension (W2). The largest in plane aperture dimension is larger than the diffraction limit. A source is provided for emitting a beam of radiation having a wavelength incident at the optical device and having a direction of incidence non parallel to an out of plane normal direction, for providing the evanescent radiation in the detection volume, in response to the radiation incident at the optical device. The plane of incidence may be parallel to the largest in plane aperture dimension.
申请公布号 US8158398(B2) 申请公布日期 2012.04.17
申请号 US20080810022 申请日期 2008.12.18
申请人 KLUNDER DERK J. W.;KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 KLUNDER DERK J. W.
分类号 G01N21/31;G01N21/64;G02B27/56 主分类号 G01N21/31
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