发明名称 |
Method of forming a sapphire single crystal |
摘要 |
Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods for forming such crystals and an apparatus for carrying out the methods are disclosed as well. |
申请公布号 |
US8157913(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20080021758 |
申请日期 |
2008.01.29 |
申请人 |
LOCHER JOHN W.;ZANELLA STEVEN A.;MACLEAN, JR. RALPH L.;BATES HERBERT ELLSWORTH;SAINT-GOBAIN CERAMICS & PLASTICS, INC. |
发明人 |
LOCHER JOHN W.;ZANELLA STEVEN A.;MACLEAN, JR. RALPH L.;BATES HERBERT ELLSWORTH |
分类号 |
C30B15/00;C30B15/34;C30B29/20 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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