发明名称 |
6T SRAM cell with single sided write |
摘要 |
An SRAM cell containing an auxiliary driver transistor is configured for a single sided write operation. The auxiliary driver transistor may be added to a 5-transistor single-sided-write SRAM cell or to a 7-transistor single-sided-write SRAM cell. The SRAM cell may also include a read buffer. During read operations, the auxiliary drivers are biased. During write operations, the auxiliary drivers in half-addressed SRAM cells are biased and the auxiliary drivers in the addressed SRAM cells may be floated or biased. |
申请公布号 |
US8159863(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20100782874 |
申请日期 |
2010.05.19 |
申请人 |
HOUSTON THEODORE W.;SESHADRI ANAND;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W.;SESHADRI ANAND |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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