发明名称 |
Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features |
摘要 |
A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. Subsequently, a metal seed layer is deposited using the same techniques used to deposit the barrier layer, to avoid excessive build up of metal seed layer material on the openings to the features, with minimal sputtering of the barrier layer surface. |
申请公布号 |
US8158511(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US201113068821 |
申请日期 |
2011.05.20 |
申请人 |
CHIANG TONY;YAO GONGDA;DING PEIJUN;CHEN FUSEN E.;CHIN BARRY L.;KOHARA GENE Y.;XU ZHENG;ZHANG HONG;APPLIED MATERIALS, INC. |
发明人 |
CHIANG TONY;YAO GONGDA;DING PEIJUN;CHEN FUSEN E.;CHIN BARRY L.;KOHARA GENE Y.;XU ZHENG;ZHANG HONG |
分类号 |
H01L21/285;H01L21/44;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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