发明名称 Substrate bonding method and semiconductor device
摘要 (a) A first Sn absorption layer (5) is formed on the principal surface of a first substrate (1), the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. (b) A second Sn absorption layer (17) is formed on the principal surface of a second substrate (11) the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. (c) A solder layer (7) made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. (d) The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.
申请公布号 US8158459(B2) 申请公布日期 2012.04.17
申请号 US20080142030 申请日期 2008.06.19
申请人 SEKO TOSHIHIRO;STANLEY ELECTRIC CO., LTD. 发明人 SEKO TOSHIHIRO
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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