METHOD FOR FORMING THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to easily measure the CD(Critical Dimension) of a photosensitive pattern by forming a CD mark before forming the photosensitive pattern. CONSTITUTION: A structure(102) made of a poly-silicon and an oxide film is formed on an upper part of a semiconductor substrate(100). A pattern(104) is formed on the upper part of the structure. A CD(Critical Dimension) mark(106) is formed by etching the structure to expose a semiconductor substrate. A photosensitive pattern(108) is formed to be separated from the CD mark. The photosensitive pattern is formed through a sliming process of the photosensitive pattern.