| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the resistance of a contact resistance and a bit line between a landing plug and a bit line from increasing. CONSTITUTION: A hard mask pattern(34) is formed on a substrate(31). An element isolation film(32) which defines an active area(33) is formed by using a hard mask pattern. An inter-layer insulating film(38) is formed on the element isolation film. A first photoresist pattern is formed on the inter-layer insulating film. A second photoresist pattern is formed on the inter-layer insulating film. A storage node contact hole(41) is formed by etching the inter-layer insulating film.
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