A SEMICONDUCTOR DEVICE AND A METHOD OF FORMING THE SAME
摘要
<p>PURPOSE: A semiconductor device and a formation method thereof are provided to prevent an electrical short of a liner electrode and contact plugs by increasing the distance between the liner electrode and the contact plug. CONSTITUTION: A bulk electrode(135) is arranged within a trench. A liner electrode(125) is formed between the bulk electrode and the inner surface of the trench. The liner electrode includes a sidewall part. The sidewall part is arranged between sidewalls of the bulk electrode and the trench. A gate dielectric film(110) is arranged between the inner surface of the trench and the liner electrode.</p>
申请公布号
KR20120035701(A)
申请公布日期
2012.04.16
申请号
KR20100097388
申请日期
2010.10.06
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
HWANG, HEE DON;MIN, JI YOUNG;PARK, JONG CHUL;JEON, IN SANG;SHIM, WOO GWAN