LIGHT EMITTING DOIDE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A light emitting diode and a manufacturing method thereof are provided to prevent a specific site from being deteriorated and extend the lifetime of a light emitting diode by maintaining the uniform electric potential difference between first and second conductive compound semiconductor layers. CONSTITUTION: A substrate(112) is classified into a first area(R1) and a second area(R2). A first compound semiconductor layer(114) is formed on the substrate. The first compound semiconductor layer is classified into a first sub compound semiconductor layer(114a) and a second sub compound semiconductor layer(114b). A metal pattern(116) is formed between the first and the second sub compound semiconductor layers. An active layer(118) is formed on the first compound semiconductor.