| 摘要 |
PURPOSE: A method for fabricating a buried bit line of a vertical transistor is provided to ensure the stability and reliability of a device by improving a contact resistance characteristic of a buried bit line which is contacted with a drain region. CONSTITUTION: A trench(215) is formed on a semiconductor substrate(200). A liner film(220) is formed on the substrate on which the trench is formed. The liner film is selectively eliminated and an open area is formed. A polysilicon layer is formed on the liner film. A metal layer is formed on the polysilicon layer. A silicide metal film is formed between the polysilicon layer and a metal layer. A buried bit line(275), which recesses the silicide metal film and fills a part of the trench, is formed.
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