SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS WITH ABRUPT JUNCTION PROFILES AND METHODS OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device which includes source/drain regions with a steep slope junction profile and a manufacturing method thereof are provided to perform a heat treatment process for diffusing impurities at low temperatures, thereby providing excellent junction leakage current properties. CONSTITUTION: A semiconductor substrate(1) is etched using a gate pattern as an etching mask. A pair of active trenches(19a,19b) is formed on the semiconductor substrate by being separated from each other. Epitaxial layers(21,25) are respectively formed within the activity trenches. The epitaxial layer is formed by successively laminating a first layer and a second layer. The first and second layers are formed into a semiconductor layer which has a lattice constant larger than the semiconductor substrate.