| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to sufficiently secure an overlap area between a storage electrode contact and an active area by improving process margin. CONSTITUTION: A line pattern is formed on the upper side of a semiconductor substrate(100). A first photoresist film pattern is formed to alternatively expose the line pattern. A freezing process is performed on the first photoresist film pattern. A second photoresist film pattern is formed on the upper side of the semiconductor substrate to cross the line pattern. An active area(105a) is formed by etching the line pattern using the second photoresist film pattern as a mask.</p> |
