| 摘要 |
PURPOSE: A contact of a semiconductor device and a forming method thereof are provided to reduce a volume of copper materials by forming a first contact with a small line width on the upper side of a semiconductor substrate. CONSTITUTION: A first contact(120) is formed on a semiconductor substrate. A through silicon via is connected to the first contact. The through silicon via includes a second contact(130). The linewidth of the second contact is smaller than the linewidth of the first contact. The first contact and the second contact include copper.
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