| 摘要 |
PURPOSE: A resistive memory device and a manufacturing method thereof are provided to improve a set/reset operation property by making oxygen vacancy density per unit volume different in a first resistance layer and a second resistance layer. CONSTITUTION: A resistive memory device comprises a first resistance layer, a second resistance layer(23) and a top electrode(25). The first resistance layer is formed on a bottom electrode(21). The top electrode is formed on the second resistance layer. The first and second resistance layers have oxide.
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