发明名称 |
METHODS FOR ETCHING SUBSTRATES USING PULSED DC VOLTAGE |
摘要 |
Methods for etching substrates using a pulsed DC voltage are provided herein. In some embodiments, a method for method for etching a substrate disposed on a substrate support within a process chamber may include providing a process gas to the process chamber; forming a plasma from the process gas; applying a pulsed DC voltage to a first electrode disposed within the process chamber; and etching the substrate while applying the pulsed DC voltage.
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申请公布号 |
US2012088371(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113089374 |
申请日期 |
2011.04.19 |
申请人 |
RANJAN ALOK;GANI NICOLAS;SHEN MEIHUA;KHAN ANISUL H.;APPLIED MATERIALS, INC. |
发明人 |
RANJAN ALOK;GANI NICOLAS;SHEN MEIHUA;KHAN ANISUL H. |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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