发明名称 SEMICONDUCTOR DEVICE AND STRUCTURE
摘要 A method of manufacturing a semiconductor wafer, the method comprising: a first monocrystalline layer comprising semiconductor regions, overlaying the first monocrystalline layer with an isolation layer; preparing a second monocrystalline layer comprising semiconductor regions overlying the isolation layer; and etching portions of the first monocrystalline layer as part of forming at least one transistor on said first monocrystalline layer.
申请公布号 US2012088355(A1) 申请公布日期 2012.04.12
申请号 US201113246157 申请日期 2011.09.27
申请人 SEKAR DEEPAK C.;OR-BACH ZVI;MONOLITHIC 3D INC. 发明人 SEKAR DEEPAK C.;OR-BACH ZVI
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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