METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

The problem addressed by the present invention is providing a method for manufacturing a semiconductor device that can make use of the advantages of a low permittivity CFx film and that can prevent deterioration of characteristics because of CMP treatment in a semiconductor device with a multilayer wiring structure having a CFx film for an interlayer insulating film. This method for manufacturing a semiconductor device comprises: a step (a) for forming a CFx film; a step (b) for forming a recessed part of a prescribed pattern on the CFx film; a step (c) for providing a wiring layer embedded in the recessed part and going across the top of the CFx film; a step (d) for eliminating excess wiring layer on the CF x film other than within the recessed part and exposing the surface of the CFx film. Before or after the step (b), a step (e) for nitriding the surface of the CFx film is provided.