| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of widening directivity. <P>SOLUTION: The light-emitting device comprises: a single crystal substrate having a plurality of projections positioned on the same plane as each of upper surfaces of the projections at the upper side; and a optical semiconductor layer formed on the projections of the single crystal substrate. The projections has a gradually-thinned portion of which a cross section in parallel to upper surfaces of the projections is gradually smaller than that of the upper surfaces of the projections toward the down side from the upper surfaces of the projections. The optical semiconductor layer comprises a semiconductor layer grown on the upper surfaces of the projections. The semiconductor layer in which a lower edge is positioned on the upper surfaces of the projections and an upper edge is positioned on the upper surface of the semiconductor layer, has a dislocation extending from the lower edge to the upper edge, and an upper edge of the dislocation is arranged so as not to overlap with the projections, when viewed from the upper side. Therefore the directivity of the light-emitting device can be widen because the light can easily be emitted from the projections side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
