| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device called CSP in which the periphery of an electrode for external connection is covered with a sealing film and burrs are prevented from being produced on the top face of the electrode for external connection when grinding the top face side of the sealing film. <P>SOLUTION: After forming electrodes 10 for external connection by electrolytic plating using a plating resist film, the upper parts of all the electrodes 10 for external connection and the top face sides of the plating resist films corresponding to them are cut and removed by using a surface planer to align the heights of the electrodes 10 for external connection. In this case, no burr is produced on the top face of the electrode 10 for external connection. The plating resist film is then peeled off to form the sealing film 11, and the top face side of the sealing film 11 is grounded so as to slightly leave the sealing film 11 (for example, a few μm-10 μm in thickness) on the electrode 10 for external connection. In this case, no burr is produced on the top face of the electrode 10 for external connection, since the upper part of the electrode 10 for external connection is not grounded. An opening part 12 is then formed by laser processing for irradiating the sealing film 11 in a section corresponding to the center part of the top face of the electrode 10 for external connection with a laser beam. <P>COPYRIGHT: (C)2012,JPO&INPIT |
