| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device copper alloy bonding wire which has a reduced material cost, a good PCT reliability in a high humidity and high temperature environment, a good TCT reliability in a heat cycle test, a good shape of a pressure-welded ball, a good wedge bondability, and a good loop formability, and so on. <P>SOLUTION: The semiconductor device copper alloy bonding wire is obtained by drawing a Cu alloy containing by mass, 0.13 to 1.15% of Pd and the balance comprising copper and inevitable impurities, and has a good ball deformation and a superior mass productivity. <P>COPYRIGHT: (C)2012,JPO&INPIT |
