| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a generated swell and peeling-off between pasted laminate faces and a void defect, induced by fine particles such as particles inserted between both semiconductor substrates, when a semiconductor substrate for device formation is pasted on a holding semiconductor substrate. <P>SOLUTION: A silicon oxide film 4 is formed on a semiconductor substrate 1 for device formation. Also, a silicon oxide film 6 is formed on a holding semiconductor device 2. On the silicon oxide film 6, a coating film 7 of a semiconductor wafer liquid insulation material, formed of liquid etc. having organic binder added to an organic solvent, is formed. Next, the semiconductor substrate 1 for device formation is pasted to the holding semiconductor device 2 via the silicon oxide film 4 and the coating film 7 on the silicon oxide film 6. <P>COPYRIGHT: (C)2012,JPO&INPIT |
