| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small wavelength variable semiconductor laser capable of continuously sweeping and changing output light over a large wavelength variable area at high-speed and driving with low power consumption, in a relatively simple structure. <P>SOLUTION: In a wavelength variable semiconductor laser, an end face emission type semiconductor laser is mounted on a silicon on insulator (SOI) substrate in which an actuator is formed, and a movable mirror part is provided in the actuator so as to face a laser light emission end face of the end face emission type semiconductor laser. A distributed bragg reflector (DBR) is formed along the optical axis direction in the end face emission type semiconductor laser. <P>COPYRIGHT: (C)2012,JPO&INPIT |
