| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium-nitride-based semiconductor element and a manufacturing method thereof. <P>SOLUTION: A gallium nitride-based semiconductor element includes: a conductive heat dissipation substrate (that is, a thermally conductive substrate); a GaN-based multilayer provided on the heat dissipation substrate; and a Schottky electrode provided on the GaN-based multilayer. The GaN-based multilayer can include an AlGaN layer provided on the heat dissipation substrate side and a GaN layer provided on the Schottky electrode side. During the manufacture of such a gallium nitride-based semiconductor element, wafer bonding (or plating) and a laser lift off process can be utilized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
