发明名称 |
MULTI-BIT MEMORY WITH SELECTABLE MAGNETIC LAYER |
摘要 |
An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed. |
申请公布号 |
US2012087186(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US20100900314 |
申请日期 |
2010.10.07 |
申请人 |
AMIN NURUL;VAN EK JOHANNES;SEAGATE TECHNOLOGY LLC |
发明人 |
AMIN NURUL;VAN EK JOHANNES |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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