发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of alleviating heat stress when a large current is energized using a post-shaped electrode and surely connecting the post-shaped electrode to an electrode of a semiconductor chip. <P>SOLUTION: A metal particle protected by organic coating is applied to at least one of bonding surfaces of a front-surface electrode of a semiconductor chip 1 and a post electrode 15, pressure and heat is applied between the front-surface electrode of the semiconductor chip and the post electrode 15, and the organic coating is broken to expose the metal particle and actively connect the metal particle to the bonding surfaces, thereby connecting the front-surface electrode and the post electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012074433(A) 申请公布日期 2012.04.12
申请号 JP20100216494 申请日期 2010.09.28
申请人 FUJI ELECTRIC CO LTD 发明人 IIZUKA YUJI
分类号 H01L21/60;H01L25/07;H01L25/18 主分类号 H01L21/60
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