发明名称 METHOD AND SYSTEM FOR EVALUATING EUV MASK FLATNESS
摘要 <P>PROBLEM TO BE SOLVED: To provide an excellent method and a system for supervising flatness or non-flatness of a lithographic optical element. <P>SOLUTION: A method (200) for evaluating a lithography system and the components thereof are disclosed. The method (200) includes: in regard to electromagnetic radiation of a second wavelength or wavelength range, which is different from a first wavelength or wavelength range for lithographic processing in a lithography system, detecting (204) on a substrate having a photosensitive layer at least a portion of the electromagnetic radiation reflected on the lithographic optical element in the direction of the lithographic optical element; thereafter evaluating (205) the detected electromagnetic radiation; and from the evaluation of the exposed photosensitive layer, determining (206) convexoconcave shape parameters of the lithographic optical element and/or the holder therefor. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012074677(A) 申请公布日期 2012.04.12
申请号 JP20110166329 申请日期 2011.07.29
申请人 IMEC 发明人 LORUSSO GIAN FRANCESCO;LEE SANG
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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