| 发明名称 |
HIGH VOLTAGE MOS DEVICE AND METHOD FOR MAKING THE SAME |
| 摘要 |
A high-voltage metal-oxide-semiconductor (HVMOS) device may include a source, a drain, a gate positioned proximate to the source, a drift region disposed substantially between the drain and a region of the gate and the source, and a self shielding region disposed proximate to the drain. A corresponding method is also provided.
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| 申请公布号 |
US2012086052(A1) |
申请公布日期 |
2012.04.12 |
| 申请号 |
US20100899152 |
申请日期 |
2010.10.06 |
| 申请人 |
CHEN CHIEH-CHIH;LIN CHENG-CHI;LIN CHEN-YUAN;LIEN SHIH-CHIN;WU SHYI-YUAN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHIEH-CHIH;LIN CHENG-CHI;LIN CHEN-YUAN;LIEN SHIH-CHIN;WU SHYI-YUAN |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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