| 摘要 |
<p>The present invention addresses the problem of providing a vapor deposition device which is suited to the manufacture of an organic EL device, and which can grow film on a large number of base materials per unit time. A vacuum vapor deposition device (1) has a vacuum chamber (2), and built into the vacuum chamber (2) are a substrate mounting base (3), an evaporation device (5), and a vapor chamber (6). The vapor chamber (6) integrates a crucible installation section (12), a vapor passing section (13), and thin film material discharge sections (25) and (26), and functions as a passage through which vapor from the thin film material passes. Surfaces (32) of glass substrates (7a) and (7b) on which a film is to be formed are respectively positioned opposite each of the thin film material discharge sections (25) and (26), and are parallel to the glass substrates (7a) and (7b) and the thin film material discharge sections (25) and (26). As a result, the thin film material vapor discharged from holes (27) in the thin film material discharge sections (25) and (26) is evenly applied to the entire surface of the glass substrates (7a) and (7b), and because heat is drawn away by and hardening takes place on the surface, the desired film formation occurs simultaneously on the surfaces of the glass substrates (7a) and (7b).</p> |
