| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxially coated semiconductor wafer free of stress. <P>SOLUTION: In the method for producing an epitaxially coated semiconductor wafer, a semiconductor wafer having at least the front side polished is provided and is placed on a susceptor in a single-wafer epitaxy reactor and is coated by applying an epitaxial layer on the polished front side by chemical vapor deposition at a temperature of 1,000 to 1,200°C. In this method, the semiconductor wafer is cooled in the temperature range from 1,200 to 900°C at a rate of less than 5°C per second. <P>COPYRIGHT: (C)2012,JPO&INPIT |
