发明名称 THIN FILM TRANSISTOR DISPLAY PLATE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film transistor display plate with excellent image quality while simplifying the manufacturing process, and provide a thin film transistor display plate with a higher pixel aperture ratio. <P>SOLUTION: A thin film transistor display plate comprises: a gate line formed on a substrate; a gate insulation film formed on the gate line; a first semiconductor formed on the gate insulation film; a data line and a drain electrode formed on at least a part of the first semiconductor; an accumulation conductor formed on the gate insulation film; a first protection film formed on the data line, the drain electrode, and the accumulation conductor; a second protection film formed on the first protection film and having an opening part located on the accumulation conductor; and a pixel electrode formed on the second protection film, connected to the drain electrode, and overlapping with the accumulation conductor at the opening part. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012073647(A) 申请公布日期 2012.04.12
申请号 JP20110285112 申请日期 2011.12.27
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 YOO HAE-YEONG;KIN SHOSHU;KIN SHOKO;CHIN HONG-KEE;OH MIN-SEOK;CHOI HEE-HWAN;KIM SHI-YUL
分类号 G02F1/1368;H01L21/336;H01L29/786 主分类号 G02F1/1368
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