发明名称 |
HIGH PRODUCTIVITY THIN FILM DEPOSITION METHOD AND SYSTEM |
摘要 |
High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer. |
申请公布号 |
US2012085278(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113157250 |
申请日期 |
2011.06.09 |
申请人 |
MOSLEHI MEHRDAD M.;KRAMER KARL-JOSEF;ASHJAEE JAY;KAMIAN GEORGE D.;MORDO DAVID;YONEHARA TAKAO;SOLEXEL INC. |
发明人 |
MOSLEHI MEHRDAD M.;KRAMER KARL-JOSEF;ASHJAEE JAY;KAMIAN GEORGE D.;MORDO DAVID;YONEHARA TAKAO |
分类号 |
C30B23/06;C23C16/455;C23C16/46;C30B23/02;H01L21/673 |
主分类号 |
C30B23/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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