发明名称 |
GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR STRUCTURE |
摘要 |
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity. |
申请公布号 |
US2012086016(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US201113323365 |
申请日期 |
2011.12.12 |
申请人 |
YANG JONG IN;LEE SANG BUM;SONG SANG YEOB;LEE SI HYUK;KIM TAE HYUNG;SAMSUNG LED CO., LTD. |
发明人 |
YANG JONG IN;LEE SANG BUM;SONG SANG YEOB;LEE SI HYUK;KIM TAE HYUNG |
分类号 |
H01L29/20;H01L33/02 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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