发明名称 INTEGRATED SMART POWER SWITCH
摘要 A device with a controller, controllable semiconductor device and sensor is described. The controller, In conjunction with the sensor, monitors the operation of the controllable semiconductor device and, in the existence of a certain condition, dynamically modifies at least one operating parameter of the controllable semiconductor device to ensure that the semiconductor operates in accordance with both a safe operating area condition and a predetermined reliability characteristic of the semiconductor device. The sensor acquires, and supplies to the controller, data relating to a second operating parameter of the semiconductor device. The controller uses data relating to a first, controllable, operating parameter of the semiconductor device to determine a first predicted value. It compares the data from the sensor with the first predicted value and uses the results of the comparison to modify the first operating parameter of the semiconductor whilst the semiconductor device is operating.
申请公布号 KR20120034760(A) 申请公布日期 2012.04.12
申请号 KR20127002087 申请日期 2006.03.21
申请人 RAYTHEON COMPANY 发明人 JACOBSON BORIS S.
分类号 G01K7/42;H01L35/00;H03K17/082 主分类号 G01K7/42
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