FLEXIBLE FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME
摘要
<p>PURPOSE: A flexible field effect transistor and a manufacturing method thereof are provided to manufacture low voltage operation graphene FET(Field Effect Transistor) array on a plastic substrate by using ionic gel for a gate insulator. CONSTITUTION: A semiconductor layer includes a carbon nano-structure which is arranged to form a channel region between a source electrode and a drain electrode. The carbon nano structure includes graphene. The graphene is formed on a metal catalytic layer by chemical vapor deposition. An ionic gel layer is formed between the semiconductor layer and the gate electrode including the carbon nano-structure. The ionic gel layer forms an insulator layer between the channel region and the gate electrode.</p>
申请公布号
KR20120034349(A)
申请公布日期
2012.04.12
申请号
KR20100095834
申请日期
2010.10.01
申请人
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION;SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK
发明人
AHN, JONG HYUN;CHO, JEONG HO;HONG, BYUNG HEE;JANG, HO UK;LEE, SEOUNG KI;KIM, BEOM JOON