| 发明名称 |
POLISHING COMPOSITION INCLUDING INHIBITOR OF TUNGSTEN ETCHING |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new chemical mechanical polishing composition which polishes tungsten at high speed while not forming unnecessary recesses of a tungsten plug. <P>SOLUTION: This invention provides a chemical mechanical polishing composition and a slurry comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching, and methods for using the composition and the slurry to polish tungsten-containing substrates. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012074734(A) |
申请公布日期 |
2012.04.12 |
| 申请号 |
JP20110272579 |
申请日期 |
2011.12.13 |
| 申请人 |
CABOT MICROELECTRONICS CORP |
发明人 |
GRUMBINE STEVEN K;CHRISTOPHER C STREINZ;ERIC WG HOGLUND |
| 分类号 |
B24B37/00;H01L21/304;C09G1/02;C09K3/14;C09K13/04;C09K15/20;C23F3/00;H01L21/306;H01L21/321 |
主分类号 |
B24B37/00 |
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