| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition method capable of reducing resistance of contact holes by depositing a titanium film thinner and excellent in coverage by causing a film deposition reaction in a reaction control region, even if the contact holes have large aspect ratios. <P>SOLUTION: The film deposition device is provided with a susceptor 112 mounting a substrate W; a shower head 120 supplying a treatment gas in a treatment chamber 111; a high frequency generator 143 supplying predetermined high frequency power for forming plasma to the shower head; an exhaust device 152 exhausting inside of the treatment chamber to reduce the pressure to the predetermined pressure; and a control unit 190 controlling the reaction control region by changing any of a flow rate of a reducing gas, a pressure inside the treatment chamber, and high frequency power, so that a flow rate of a film deposition gas to be applied to a film deposition treatment of a titanium film is set in the reaction control region of the film deposition treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
