EPITAXIAL WAFER, LIGHT-RECEIVING ELEMENT, OPTICAL SENSOR DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER AND LIGHT-RECEIVING ELEMENT

摘要

Provided is an epitaxial wafer within which is a layer containing antimony, and which can be manufactured efficiently with reduced yield-decreasing surface defects, and with which the inclusion of impurities that cause a deterioration in performance can be prevented; also provided are a light-receiving element and the like. The manufacturing method is characterized in that it has a step wherein a layer containing antimony (Sb) is grown on a substrate (1) using an all-organometallic vapor deposition method, and steps wherein layers up to and including a window layer (5) which do not contain antimony are grown on the antimony-containing layer, and the growth that occurs subsequent to growth of the antimony-containing layer and until growth of the window layer is completed occurs at a temperature of 425-525°C.