FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a structure that can reduce the zero current of a field effect transistor using conductor-semiconductor junction.

SOLUTION: A floating electrode 102 including a conductor or a semiconductor covered with an insulator 104 is formed between a semiconductor layer 101 and a gate 105 so as to cross the semiconductor layer 101. By charging the floating electrode 102, the carrier inflow from a source electrode 103a and a drain electrode 103b is prevented. Thus, the carrier concentration of the semiconductor layer 101 can be suppressed to be sufficiently low to reduce the zero current.

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