| 摘要 |
<P>PROBLEM TO BE SOLVED: To generate a peak wavelength of an enhanced electric field of a photoelectric conversion element at shorter wavelengths. <P>SOLUTION: A photoelectric conversion element comprises: a first metal layer; a semiconductor layer 10 provided on the first metal layer; a second metal layer 101 that is provided on the semiconductor layer and includes a porous thin film having a plurality of openings each having an average area ranging from 80 nm<SP POS="POST">2</SP>or more to 0.8 μm<SP POS="POST">2</SP>or less, or a plurality of microbodies each having an average volume ranging from 4 nm<SP POS="POST">3</SP>or more to 0.52 μm<SP POS="POST">3</SP>or less; and a wavelength conversion layer 200 that is provided between the semiconductor layer 10 and the second metal layer 101 and in which the refractive index of at least a portion having a distance within 5 nm from an end of the second metal layer is smaller than that of the semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
