| 摘要 |
A according to one embodiment, a semiconductor growth apparatus growing a semiconductor layer on a substrate includes a susceptor, a heater element, a gas feed unit and an auxiliary susceptor. The susceptor includes a first major surface, a second major surface and a substrate holder provided in the first major surface. The heater element heats the susceptor from the second major surface side. The gas feed unit feeds source gases of the semiconductor layer flowing along the first major surface. The auxiliary susceptor is disposed on a portion adjacent to the substrate holder on an upstream side in the source gas flow in the first major surface. |
