TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCESS MEMORY DEVICE

摘要

A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.