| 摘要 |
A semiconductor device (100) according to the present invention comprises a thin-film transistor (10) provided with a gate electrode (62a), a first insulating layer (64), an oxide semiconductor layer (66a), a protective layer (68), a source electrode (72as), and a second insulating layer (74). A first junction (30) comprises a lower metal layer (72c), an upper metal layer (72c), and an insulating layer (74). A second junction (40) comprises a lower metal layer (72d), and an upper conductive layer (17d). The second junction (40) has formed therein: a region in which the lower metal layer (72d) and the upper conductive layer (17d) come into contact with each other; and a region in which the insulating layer (74) comprising the same material as the first insulating layer and a semiconductor layer (66d) comprising the same material as the oxide semiconductor layer (66a) are stacked between the lower metal layer (72d) and the upper conductive layer (17d). As a result, a semiconductor device having increased performance can be provided with high manufacturing efficiency. |
